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1

[IRE 1984 International Electron Devices Meeting - ()] 1984 International Electron Devices Meeting - A highly reliable N-MOS process for one megabit dynamic random access memory

Matsukawa, T., Inuishi, M., Mitsuhashi, J., Hirayama, M., Tsukamoto, K., Uoya, S., Yoshihara, T., Nakata, H.

Year:

1984

Language:

english

File:

PDF, 577 KB

english, 1984

2

[IEEE 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Prague, Czech Republic (2016.6.12-2016.6.16)] 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - On the scaling limit of the Si-IGBTs with very narrow mesa structure

Eikyu, Katsumi, Sakai, Atsushi, Matsuura, Hitoshi, Nakazawa, Yoshito, Akiyama, Yutaka, Yamaguchi, Yasuo, Inuishi, Masahide

Year:

2016

Language:

english

File:

PDF, 849 KB

english, 2016

3

Reliability simulation of AC hot carrier degradation for deep sub-micron MOSFETs

Satoshi Shimizu, Motoaki Tanizawa, Shigeru Kusunoki, Masahide Inuishi, Hirokazu Miyoshi

Journal:

Electronics and Communications in Japan (Part II: Electronics))

Year:

1996

Language:

english

File:

PDF, 702 KB

english, 1996

4

Vapor growth of thin heteroepitaxial InP films on CdS

Masahide Inuishi, Bruce W. Wessels

Journal:

Thin Solid Films

Year:

1982

Language:

english

File:

PDF, 416 KB

english, 1982

5

Deep level transient spectroscopy of interface and bulk trap states in InP metal/oxide/semiconductor structures

Masahide Inuishi, Bruce W. Wessels

Journal:

Thin Solid Films

Year:

1983

Language:

english

File:

PDF, 502 KB

english, 1983

6

Suppression of charge carrier collection in diode with retrograde well and epitaxial layers for soft-error immunity

T. Kishimoto, M. Takai, Y. Ohno, T. Nishimura, M. Inuishi, A. Kinomura, Y. Horino, K. Fujii

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1997

Language:

english

File:

PDF, 496 KB

english, 1997

7

Graded-junction gate/n- overlapped LDD MOSFET structures for high hot-carrier reliability

Okumura, Y., Kunikiyo, T., Ogoh, I., Genjo, H., Inuishi, M., Nagatomo, M., Matsukawa, T.

Journal:

IEEE Transactions on Electron Devices

Year:

1991

Language:

english

File:

PDF, 888 KB

english, 1991

8

0.5 MJ superconducting pulse magnet for energy storage

Murakami, Y., Okada, T., Yamamoto, J., Inuishi, Y., Mitsuishi, A., Nishimura, M.

Journal:

IEEE Transactions on Magnetics

Year:

1981

Language:

english

File:

PDF, 284 KB

english, 1981

9

A 65-nm SoC Embedded 6T-SRAM Designed for Manufacturability With Read and Write Operation Stabilizing Circuits

Ohbayashi, S., Yabuuchi, M., Nii, K., Tsukamoto, Y., Imaoka, S., Oda, Y., Yoshihara, T., Igarashi, M., Takeuchi, M., Kawashima, H., Yamaguchi, Y., Tsukamoto, K., Inuishi, M., Makino, H., Ishibashi, K.

Journal:

IEEE Journal of Solid-State Circuits

Year:

2007

Language:

english

File:

PDF, 2.41 MB

english, 2007

10

P

Yasuda, Naohiko, Fujimoto, Sanji, Okamoto, Motohide, Shimizu, Hiroyasu, Yoshino, Katsumi, Inuishi, Yoshio

Journal:

Physical Review B

Year:

1979

Language:

english

File:

PDF, 936 KB

english, 1979

11

[IEEE IEEE International Electron Devices Meeting - Washington, DC, USA (5-8 Dec. 1993)] Proceedings of IEEE International Electron Devices Meeting - Novel NICE (nitrogen implantation into CMOS gate electrode and source-drain) structure for high reliability and high performance 0.25 μm dual gate CMOS

Kuroi, T., Hamaguchi, T., Shirahata, M., Okumura, Y., Kawasaki, Y., Inuishi, M., Tsubouchi, N.

Year:

1993

Language:

english

File:

PDF, 352 KB

english, 1993

12

[IEEE 2006 Symposium on VLSI Circuits, 2006. Digest of Technical Papers. - Honolulu, HI, USA (June 15-17, 2006)] 2006 Symposium on VLSI Circuits, 2006. Digest of Technical Papers. - A 65 nm SoC Embedded 6T-SRAM Design for Manufacturing with Read and Write Cell Stabilizing Circuits

Ohbayashi, S., Yabuuchi, M., Nii, K., Tsukamoto, Y., Imaoka, S., Oda, Y., Igarashi, M., Takeuchi, M., Kawashima, H., Makino, H., Yamaguchi, Y., Tsukamoto, K., Inuishi, M., Ishibashi, K., Shinohara, H.

Year:

2006

Language:

english

File:

PDF, 715 KB

english, 2006

13

[IEEE International Electron Devices Meeting. Technical Digest - Washington, DC, USA (2-5 Dec. 2001)] International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) - 70 nm SOI-CMOS of 135 GHz f/sub max/ with dual offset-implanted source-drain extension structure for RF/analog and logic applications

Matsumoto, T., Maeda, S., Ota, K., Hirano, Y., Eikyu, K., Sayama, H., Iwamatsu, T., Yamamoto, K., Katoh, T., Yamaguchi, Y., Ipposhi, T., Oda, H., Maegawa, S., Inoue, Y., Inuishi, M.

Year:

2001

Language:

english

File:

PDF, 351 KB

english, 2001

14

[IEEE International Electron Devices Meeting - Washington, DC, USA (10-13 Dec. 1995)] Proceedings of International Electron Devices Meeting - Impact of surface proximity gettering and nitrided oxide side-wall spacer by nitrogen implantation on sub-quarter micron CMOS LDD FETs

Shimizu, S., Kuroi, T., Kawasaki, Y., Kusunoki, S., Okumura, Y., Inuishi, M., Miyoshi, H.

Year:

1995

Language:

english

File:

PDF, 443 KB

english, 1995

15

[IEEE International Electron Devices Meeting. Technical Digest. IEDM - San Francisco, CA, USA (10-13 Dec. 2000)] International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) - 80 nm CMOSFET technology using double offset-implanted source/drain extension and low temperature SiN process

Sayama, H., Nishida, Y., Oda, H., Tsuchimoto, J., Umeda, H., Teramoto, A., Eikyu, K., Inoue, Y., Inuishi, M.

Year:

2000

Language:

english

File:

PDF, 321 KB

english, 2000

16

[IEEE International Electron Devices Meeting 1999. Technical Digest - Washington, DC, USA (5-8 Dec. 1999)] International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) - Effect of >100< channel direction for high performance SCE immune pMOSFET with less than 0.15 μm gate length

Sayama, H., Nishida, Y., Oda, H., Oishi, T., Shimizu, S., Kunikiyo, T., Sonoda, K., Inoue, Y., Inuishi, M.

Year:

1999

Language:

english

File:

PDF, 334 KB

english, 1999

17

Novel Shallow Trench Isolation Process from Viewpoint of Total Strain Process Design for 45 nm Node Devices and Beyond

Ishibashi, Masato, Horita, Katsuyuki, Sawada, Mahito, Kitazawa, Masashi, Igarashi, Motoshige, Kuroi, Takashi, Eimori, Takahisa, Kobayashi, Kiyoteru, Inuishi, Masahide, Ohji, Yuzuru

Journal:

Japanese Journal of Applied Physics

Year:

2005

Language:

english

File:

PDF, 158 KB

english, 2005

18

Advanced Retrograde Well Technology for 90-nm-Node Embedded Static Random Access Memory Using High-Energy Parallel Beam

T. Yamashita, M. Kitazawa, Y. Kawasaki, H. Takashino, T. Kuroi, Y. Inoue, M. Inuishi

Year:

2002

Language:

english

File:

PDF, 150 KB

english, 2002

19

Temperature Dependence of Mobility of Warm Carriers in Germanium and Silicon

Hamaguchi, Chihiro, Inuishi, Yoshio

Journal:

Journal of the Physical Society of Japan

Year:

1963

File:

PDF, 1015 KB

1963

20

Mobility of Rot Carriers in Ge and Si

Inuishi, Yoshio, Hamaguchi, Chihiro

Journal:

Journal of the Physical Society of Japan

Year:

1962

File:

PDF, 159 KB

1962

21

New buried channel flash memory cell with symmetrical source/drain structure

Hidekazu Oda, Shuichi Ueno, Natsuo Ajika, Masahide Inuishi, Hirokazu Miyoshi

Journal:

Electronics and Communications in Japan (Part II: Electronics))

Year:

1997

File:

PDF, 1018 KB

1997

22

Effects of a magnetic field on triplet-triplet annihilation in a Pt-phthalocyanine single crystal at 4.2 K

K. Kaneto, K. Yoshino, Y. Inuishi

Journal:

Chemical Physics Letters

Year:

1976

Language:

english

File:

PDF, 273 KB

english, 1976

23

The polarity effect of dielectric breakdown in liquid nitrogen and its dependence on pulse width.

K. Yoshino, R. Takahashi, M. Shiraishi, H. Fujii, Y. Inuishi

Journal:

Year:

1980

Language:

english

File:

PDF, 211 KB

english, 1980

24

Growth of high-purity ZnTe single crystals by the sublimation travelling heater method

Tsunemasa Taguchi, Shigeo Fujita, Yoshio Inuishi

Journal:

Journal of Crystal Growth

Year:

1978

Language:

english

File:

PDF, 1.17 MB

english, 1978

25

Luminescence properties of iodine doped cubic ZnS crystals and the effect of ion implantation of N, P and Ag

Tsunemasa Taguchi, Toshiya Yokogawa, Shigeo Fujita, Mamoru Satoh, Yoshio Inuishi

Journal:

Journal of Crystal Growth

Year:

1982

Language:

english

File:

PDF, 435 KB

english, 1982

26

Spin-polarization and uniaxial stress effects on excitonic recombination in solution-grown CdTe

T. Taguchi, J. Shirafuji, Y. Inuishi

Journal:

Journal of Luminescence

Year:

1976

Language:

english

File:

PDF, 306 KB

english, 1976

27

Conductivity anisotropy of hot electrons in n-type silicon heated by microwave fields

C. Hamaguchi, Y. Inuishi

Journal:

Journal of Physics and Chemistry of Solids

Year:

1966

Language:

english

File:

PDF, 677 KB

english, 1966

28

Gamma and electron radiation effects in CdTe

Tsunemasa Taguchi, Junji Shirafuji, Yoshio Inuishi

Journal:

Nuclear Instruments and Methods

Year:

1978

Language:

english

File:

PDF, 634 KB

english, 1978

29

Optical waveguiding in epitaxial InxGa1−xAs single layer

T. Sugino, M. Inoue, J. Shirafuji, Y. Inuishi

Journal:

Optics Communications

Year:

1977

Language:

english

File:

PDF, 203 KB

english, 1977

30

Conductivity anisotropy of hot electrons in n-type silicon heated by microwave fields

Chihiro Hamaguchi, Yoshio Inuishi

Journal:

Solid State Communications

Year:

1966

Language:

english

File:

PDF, 137 KB

english, 1966

31

Life time measurement of amplified phonons in

A. Ishida, Y. Inuishi

Journal:

Solid State Communications

Year:

1967

Language:

english

File:

PDF, 238 KB

english, 1967

32

Magneto-Luminescence of excitons bound to neutral acceptor in cadmium telluride

T. Taguchi, J. Yamamoto, J. Shirafuji, Y. Inuishi

Journal:

Solid State Communications

Year:

1976

Language:

english

File:

PDF, 252 KB

english, 1976

33

Transverse magnetoresistance in (SN)x single crystal

K. Kaneto, M. Yamamoto, K. Yoshino, Y. Inuishi

Journal:

Solid State Communications

Year:

1978

Language:

english

File:

PDF, 347 KB

english, 1978

34

Negative magnetoresistance in (SN)x single crystal

M. Yamamoto, K. Kaneto, K. Yoshino, Y. Inuishi

Journal:

Solid State Communications

Year:

1979

Language:

english

File:

PDF, 232 KB

english, 1979

35

Electrical properties of Na-doped (SN)x single crystal

K. Kaneto, S. Sasa, K. Yoshino, Y. Inuishi, T. Yamade

Journal:

Solid State Communications

Year:

1981

Language:

english

File:

PDF, 158 KB

english, 1981

36

Microcrystalline formation in sputtered a-Si: H films

J. Shirafuji, H. Matsui, A. Narukawa, Y. Inuishi, N. Tanaka

Journal:

Solid State Communications

Year:

1983

Language:

english

File:

PDF, 310 KB

english, 1983

37

Electrical and optical properties of polythiophene prepared by electrochemical polymerization

K. Kaneto, K. Yoshino, Y. Inuishi

Journal:

Solid State Communications

Year:

1983

Language:

english

File:

PDF, 290 KB

english, 1983

38

Electrical transport in electron beam irradiated polyacetylene

K. Yoshino, S. Hayashi, G. Ishii, Y. Inuishi

Journal:

Solid State Communications

Year:

1983

Language:

english

File:

PDF, 324 KB

english, 1983

39

Photoluminescence of cis- and trans-polyacetylene

K. Yoshino, S. Hayashi, Y. Inuishi, K. Hattori, Y. Watanabe

Journal:

Solid State Communications

Year:

1983

Language:

english

File:

PDF, 187 KB

english, 1983

40

Doping effect on photoluminescence of polyacetylene

K. Yoshino, S. Hayashi, Y. Inuishi, K. Hattori, T. Hyodo, Y. Watanabe

Journal:

Solid State Communications

Year:

1984

Language:

english

File:

PDF, 261 KB

english, 1984

41

Frequency dependence of dark conductivity in glow-discharged a-Si:H

M. Kuwagaki, J. Shirafuji, Y. Inuishi

Journal:

Solid State Communications

Year:

1984

Language:

english

File:

PDF, 362 KB

english, 1984

42

Experimental and theoretical determination of hot electron distribution in GaAs and related mixed crystals

M. Inoue, N. Takenaka, J. Shirafuji, Y. Inuishi

Journal:

Solid-State Electronics

Year:

1978

Language:

english

File:

PDF, 504 KB

english, 1978

43

Hot carrier recombination radiation in GaAs diode

M. Inoue, N. Takenaka, J. Shirafuji, Y. Inuishi

Journal:

Solid-State Electronics

Year:

1978

Language:

english

File:

PDF, 359 KB

english, 1978

44

Staebler-wronski effect in a-Si:H films with different morphology

Hideki Ohagi, Motoharu Yamazaki, Jun-ichi Nakata, Shozo Imao, Junji Shirafuji, Keiji Fujibayashi, Yoshio Inuishi

Journal:

Applied Surface Science

Year:

1988

Language:

english

File:

PDF, 381 KB

english, 1988

45

Electrical breakdown in cryogenic liquids

K. Yoshino, H. Fujii, R. Takahashi, Y. Inuishi, K. Hayashi, U. Kubo

Journal:

Journal of Electrostatics

Year:

1979

Language:

english

File:

PDF, 397 KB

english, 1979

46

High field conduction in breakdown in dielectric liquids

Journal:

Journal of Electrostatics

Year:

1979

Language:

english

File:

PDF, 391 KB

english, 1979

47

Laser-induced breakdown in dielectric liquids

H. Fujii, K. Yoshino, Y. Inuishi

Journal:

Journal of Electrostatics

Year:

1979

Language:

english

File:

PDF, 311 KB

english, 1979

48

Dependence of polarity effect of dielectric breakdown on molecular structure of liquids

K. Yoshino, K. Ohseko, M. Shiraishi, M. Terauchi, Y. Inuishi

Journal:

Journal of Electrostatics

Year:

1982

Language:

english

File:

PDF, 370 KB

english, 1982

49

Dielectric breakdown of cryogenic liquids in terms of pressure, polarity, pulse width and impurity

K. Yoshino, K. Ohseko, M. Shiraishi, M. Terauchi, Y. Inuishi

Journal:

Journal of Electrostatics

Year:

1982

Language:

english

File:

PDF, 366 KB

english, 1982

50

Relatioships between aromaticity of synthetic dielectric fluids and their electrical properties

S. Yasufuku, Y. Inuishi

Journal:

Journal of Electrostatics

Year:

1982

Language:

english

File:

PDF, 274 KB

english, 1982

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